IPI200N25N3 G
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IPI200N25N3 G datasheet
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МаркировкаIPI200N25N3 G
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ПроизводительInfineon Technologies
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ОписаниеInfineon Technologies IPI200N25N3 G Configuration: Single Continuous Drain Current: 64 A Drain-source Breakdown Voltage: 250 V Fall Time: 12 nS Gate Charge Qg: 64 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-262-3 Part # Aliases: IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308 Power Dissipation: 300 W Resistance Drain-source Rds (on): 20 mOhms at 10 V Rise Time: 20 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 45 nS RoHS: yes Drain-Source Breakdown Voltage: 250 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 20 mOhms at 10 V Typical Turn-Off Delay Time: 45 nS
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Количество страниц12 шт.
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Форматы файлаHTML, PDF
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